A 22nm SoC platform technology featuring 3-D tri-gate and high-k/metal gate, optimized for ultra low power, high performance and high density SoC applications
Electron Devices Meeting（2012）
关键词
sram chips,high-k dielectric thin films,integrated circuit interconnections,low-power electronics,system-on-chip,3d trigate transistor technology,nmos-pmos,rf-mixed-signal features,embedded products,frequency 2.6 ghz,handheld products,high density soc applications,high speed logic transistors,high voltage transistors,high-density interconnect stacks,high-k-metal gate,industry leading drive currents,low standby power,low standby power sram,mix-and-match flexibility,mobile products,record low leakage levels,short channel control,size 22 nm,standby leakages,subthreshold slope,transistor types,ultra low power applications,voltage 0.75 v,wireless products,low power electronics,system on chip
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