Investigation of emerging middle-of-line poly gate-to-diffusion contact reliability issues
Reliability Physics Symposium（2012）
关键词
dram chips,sram chips,vlsi,insulators,integrated circuit reliability,finfet,mol pc-ca shorts,mol pc-to-ca dielectric reliability,sram functional stress failures,sram yield loss,advanced vlsi circuits,copper contact,diffusion contacts,epitaxial source-drain,metal gate,middle-of-line pc-to-ca dielectric reliability,middle-of-line poly gate-to-diffusion contact reliability issues,polysilicon control gate,size 32 nm,stress liner,mol,minimum insulator,pc-to-ca reliability,pc-to-ca space,gate-to-diffusion leakage,global variation,local variation,time-dependent dielectric breakdown,reliability,dielectrics,logic gates,stress
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