Experimental analysis of DC and noise parameter degradation in n-channel reduced surface field (RESURF) LDMOS transistors
Power Semiconductor Devices and ICs（2012）
Key words
mosfet,dc,ldmos drift length,ldmos transistors,resurf lateral double-diffused mos transistors,band-gap energy,dielectric/silicon interface related reliability,n-channel reduced surface field,noise analysis,noise parameter degradation,noise performance,stress induced degradation,stressing time,1/ƒ noise,resurf ldmos,degradation,drift region,extended drain,gate oxide-overlap,stress
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