Experimental Characterization of Power Transistors for Linearity Optimization

Abib, G.I.,Bergeault, E.,Bensmida, S.,Huyart, B.

Amsterdam（2008）

Cited 1|Views3

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Abstract

In this paper, different techniques are combined in a unique characterization system dedicated for power transistor linearity improvement. Successive optimizations are performed using source-pull/load-pull techniques at the fundamental and base-band frequencies associated with an instantaneous memoryless base-band predistortion procedure. Measurement results performed at 1.575 GHz on a MESFET power transistor biased in class AB for a QPSK modulated signal, show that fundamental frequency source-pull measurements lead to an ACPR variation equal to 3 dB. Moreover, the influence of base-band impedance on ACPR and EVM is found to be 15 dB and 4.5 points, respectively. Finally, instantaneous memoryless base-band predistortion improves ACPR and EVM values by 5 dB and 1 point, respectively.

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Key words

optimisation,power mesfet,quadrature phase shift keying,semiconductor device measurement,acpr,evm,mesfet power transistor,qpsk modulation,base-band impedance,base-band predistortion,frequency 1.575 ghz,optimization,source-pull/load-pull techniques,linearity,fundamental frequency,linear optimization,reflection,impedance,gain

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