A scalable high power nonlinear HBT model for a 28V HVHBT

Xiangkun Zhang,Frank Chau,Barry Lin,Xiaopeng Sun,Wenlong Ma,Peter Hu,Jingshi Yao,Chienping Lee

Atlanta, GA（2008）

引用 2|浏览15

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摘要

A scalable nonlinear HBT model for a building block (1 BB) of 28 V InGaP/GaAs HBT is presented. It is based on the AgilentHBT (AHBT) model. The building block consists of 32 finger HBTs, an input pre-matching circuit and a transistor used as an emitter follower in the related bias circuit. The P1 dB of 1 BB is 32.5 dBm. The model can account not only for DC, thermal, junction capacitances, S-parameters but also RF power, gain, IM3, operation current and collector efficiency. A good match between simulation and measurement has been achieved. By using a multiplicity parameter the model can accurately predict the DC and nonlinear RF performance of two building blocks (64 fingers, P1 dB of 35.7 dBm) and four building blocks (128 fingers, P1dB of 38.2 dBm).

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关键词

iii-v semiconductors,gallium arsenide,heterojunction bipolar transistors,indium compounds,intermodulation distortion,microwave bipolar transistors,power bipolar transistors,semiconductor device models,agilenthbt model,hvhbt,ingap-gaas,ingap/gaas hbt,building block,collector efficiency,high power nonlinear hbt model,voltage 28 v,ahbt model,gaas hvhbt,semiconductor device modeling,power amplifier,gain,radio frequency,temperature measurement,predictive models,voltage

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