Fully-Depleted Soicmos Technology Using Wxn Metal Gate and Hfsixoynz High-K Dielectric
ESSDERC 2007 PROCEEDINGS OF THE 37TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE（2007）
关键词
CMOS integrated circuits,MOSFET,low-power electronics,silicon-on-insulator,SOI wafers,WN metal gate,WxN metal gate,direct metal gate,electrical behavior,fully-depleted SOI CMOS technology,high-k dielectric,low power application,ultra-thin FDSOI MOS transistors
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