Surface Roughness Enhanced Current in Defectively Stressing Poly-Oxide-Poly Capacitors

Lieyi Sheng,Eddy De Backer,D Wojciechowski,Johan De Greve, K Dhondt,Sylvie Boonen, Dimitri Malschaert,Eric S Snyder

South Lake Tahoe, CA（2006）

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摘要

Surface roughness enhanced current stressing is shown to enhance the dielectric breakdown in poly-oxide-poly capacitors. Moreover, it is demonstrated for the first time that the changes of sophisticated polysilicon surface features as depicted by AFM-PSD (power spectral density) synthesis can globally become the dominant "defects" in deteriorating the dielectric reliability under a high electric field

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关键词

capacitors,electric breakdown,reliability,stress effects,surface roughness,afm-psd synthesis,dielectric breakdown,dielectric reliability,high electric field,poly-oxide-poly capacitors,power spectral density,sophisticated polysilicon surface,surface roughness enhanced current stressing,electric field

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