Effects of Zinc and Tellurium Doping on Minority Carrier Recombination in Lattice-Matched and Lattice-Mismatched InGaAs/InP Epitaxial Layers and Thermophotovoltaic Cells
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference（2006）
关键词
iii-v semiconductors,buffer layers,carrier lifetime,electron-hole recombination,gallium arsenide,indium compounds,photoluminescence,radiative lifetimes,semiconductor epitaxial layers,semiconductor heterojunctions,tellurium,thermophotovoltaic cells,zinc,1000 to 1300 c,ingaas-inp,ingaas:te,ingaas:zn,inp,pl transient,tpv,carrier concentration,doping level,frequency responses,lattice-matched epitaxial layers,lattice-mismatched epitaxial layers,low-injection electron lifetime,minority carrier lifetime,n-type double heterostructures,nonradiative carrier recombination process,p-type double heterostructures,photoluminescence transient,positively-charged deep-donor recombination centers,radiative carrier recombination process,energy conversion,spontaneous emission,frequency response,doping,radiative recombination,electrons,solar energy
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