High Power F-2 Lasers for Microlithography

H Mizoguchi,J Fujimoto,T Nakaike,T Suzuki, S Nagai, T Yabu, G Soumagne, T Chiba,O Wakabayashi,R Nohdomi,T Ariga,H Watanabe,T Kumazaki,N Kitatochi, K Sasano, Y Ueno,T Nishisaka,K Hotta, K Nakao

Lasers and Electro-Optics Society, 2001 LEOS 2001 The 14th Annual Meeting of the IEEE（2001）

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摘要

This paper describes the latest result of F2 laser development in Japan. F2 laser lithography is expected to be applied to the 50 nm node process. Developments discussed are line-selected F2 laser (for catadioptric imaging system) and high power ultra line-narrowed F2 laser (for dioptric imaging system)

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关键词

excimer lasers,fluorine,ultraviolet lithography,157 nm,F2,MOPA,UV microlithography,catadioptric imaging,compact absolute wavelength spectrometer,dioptric imaging,high power lasers,line-selected laser,projection lens designs

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