Characterization of a Xenon Plasma Electron Flood Gun on a GSD-200E/sup 2/ High Current Implanter Using Q/sub BD/, FLASH, SPIDER, and CHARM/sup TM/-2 Wafers

P Kopalidis,Y Erokhin,R Santiesteban, V Soncini

Alpbach（2000）

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摘要

An enhanced xenon plasma electron flood gun (PEF-Xe) used in a GSD-200E/sup 2/ ion implanter is characterized by means of various wafer test structures. High dose/beam current implants are performed under different PEF settings to investigate the charge neutralization capability of the tool. Q/sub BD/, FLASH, SPIDER and CHARM/sup TM/-2 test structures are used to explore a range of operating conditions for high beam current arsenic implants.

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关键词

MOSFET,arsenic,electron guns,electron sources,flash memories,ion implantation,plasma materials processing,semiconductor device measurement,semiconductor device testing,semiconductor doping,xenon,CHARM-2 wafers,FLASH wafers,GSD-200E2 high current implanter,PEF-Xe,QBD wafers,SPIDER wafers,Xe,charge neutralization capability,enhanced Xenon plasma electron flood gun,flash memory,high beam current arsenic implants,high dose/beam current implants,nmos transistor,operating condition,pmos transistors,wafer test structures,xenon plasma electron flood gun

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