Functional Characteristics and Radiation Tolerance of AToM, the Front-End Chip of BaBar Silicon Vertex Tracker

PF Manfredi, B Abbott,A Clark,J DeWitt,S Dow,A Eisner, Q Fan,A Frey,R Johnson,A Karcher,I Kipnis,W Kroeger,A Leona,M Levi,E Mandelli,L Luo,F Morsani,M Nyman,A Perazzo,M Pedrali-Noy, V Re,N Roe,N Spencer

1998 IEEE Nuclear Science Symposium Conference Record 1998 IEEE Nuclear Science Symposium and Medical Imaging Conference (Cat No98CH36255)（2002）

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关键词

digital readout,nuclear electronics,position sensitive particle detectors,radiation hardening (electronics),semiconductor device noise,silicon radiation detectors,AToM,BaBar silicon vertex tracker,Si,frontend chip,functional characteristics,microstrip signals,noise parameters,radhard process,radiation tolerance,readout chip

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