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Industrial Transfer and Stabilization of a CMOS-JFET-bipolar Radiation-Hard Analog-Digital SOI Technology

M Dentan,P Abbon, P Borgeaud,E Delagnes,N Fourches,D Lachartre,F Lugiez,B Paul,M Rouger,R Truche,JP Blanc,O Faynot,C Leroux,E Delevoye-Orsier,JL Pelloie,J de Pontcharra,O Flament,JM Guebhard,JL Leray,J Montaron,O Musseau,A Vitez,C Le Mouellic,T Corbiere,A Dantec,G Festes, J Martinez,K Rodde

1998 IEEE Nuclear Science Symposium Conference Record 1998 IEEE Nuclear Science Symposium and Medical Imaging Conference (Cat No98CH36255)（2002）

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摘要
DMILL technology integrates mixed analog-digital very rad-hard (>10 Mrad and >10/sup 14/ neutron/cm/sup 2/) vertical bipolar, 0.8 /spl mu/m CMOS and 1.2 /spl mu/m PJFET transistors on SOI substrate. In this paper, after a presentation of the DMILL program goal, we discuss more into details the main technological choices, the main milestones from the R&D to the industrial implementation, and the main results obtained after stabilization of the final process-flow in the MHS foundry.
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关键词
Analog-digital conversion,CMOS technology,Space technology,Springs,Microelectronics,Large Hadron Collider,Circuits,Radiation hardening,Foundries,Aerospace industry
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