New stress voiding observations in Cu interconnects
ieee（2005）
Key words
copper,diffusion,integrated circuit interconnections,integrated circuit reliability,internal stresses,pattern recognition,scanning electron microscopy,statistical distributions,voids (solid),175 to 400 degc,300 mm,cu,sem,bulk diffusion,compressive stress,grain boundaries,interconnect lines,interconnect via resistance increase,lognormal line void volume distribution,metal densification,metal pattern density,microstructural analysis,stress voiding,surface diffusion,tensile stress,vacancy diffusion,via resistance bimodal distribution,microstructures,dielectrics,thermal resistance,grain boundary
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