Poly-gate replacement through contact hole (PRETCH): a new method for high-k/metal gate and multi-oxide implementation on chip

S Harrison,Philippe Coronel,A Cros,Robin Cerutti,F Leverd,A Beverina,R Wacquez,J Bustos,D Delille,B Tavel,D Barge,J Bienacel,M P Samson,F Martin,S Maitrejean,Daniela Munteanu,J L Autran,Thomas Skotnicki

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST（2004）

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mosfet,titanium compounds,90 nm,mosfet configurations,sram,tin,tin dg inverters,gate oxide,gate stack,high-k metal gate,metal gate integration,multioxide,nmos,pmos,polygate replacement through contact hole,slot plane antenna oxide,standard fe process,voltage control,chip

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