A 65Nm-Node LSTP (low Standby Power) Poly-Si/a-si/hfsion Transistor with High Ion-Istandby Ratio and Reliability
Technical report of IEICE SDM（2004）
关键词
MISFET,VLSI,amorphous semiconductors,elemental semiconductors,hafnium compounds,nanotechnology,silicon,65 nm,65nm-node LSTP,Low Standby Power,Si-HfSiON,halo implant condition,poly-Si/a-Si/HfSiON transistor,reliability
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