Experimental High-Performance Sub-0.1-Mu-M Channel Nmosfets

Y Mii,S Rishton,Y Taur,D Kern,T Lii,K Lee,Ka Jenkins,D Quinlan,T Brown,D Danner,F Sewell,M Polcari

Electron Device Letters, IEEE （1994）

引用 43|浏览10

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摘要

Very high performance sub-0.1mum channel nMOSFET's are fabricated with 35 angstrom gate oxide and shallow source-drain extensions. An 8.8-ps/stage delay at V(dd) = 1.5 V is recorded from a 0.08mum channel nMOS ring oscillator at 85 K. The room temperature delay is 11.3 ps/stage. These are the fastest switching speeds reported to date for any silicon devices at these temperatures. Cutoff frequencies (f(T)) of a 0.08-mum channel device are 93 GHz at 300 K, and 119 GHz at 85 K, respectively. Record saturation transconductances, 740 mS/mm at 300 K and 1040 mS/mm at 85 K, are obtained from a 0.05-mum channel device. Good subthreshold characteristics are achieved for 0.09 mum channel devices with a source-drain halo process.

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关键词

MOS integrated circuits,VLSI,elemental semiconductors,insulated gate field effect transistors,silicon,0.05 to 0.1 micron,35 A,740 to 1040 mS/mm,8.8 to 11.3 ps,85 to 300 K,93 to 119 GHz,NMOS device,Si,nMOSFETs,saturation transconductances,shallow source-drain extensions,silicon device,source-drain halo process,sub-0.1 /spl mu/m channel,subthreshold characteristics

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