Real-time tracking of InGaAs composition during growth for multi-wafer production MBE using optical-based flux monitor (OFM)

We utilize Optical-based Flux Monitor (OFM) as a non-invasive tool for measuring group III fluxes during MBE growth of III-V material systems. This technique is used routinely in our production MBE operation to monitor epitaxial growth profile. From the growth profile, information such as layer thickness and composition are extracted. In this work, we present results on the accuracy of OFM to track composition of critical layers such as the InGaAs channel in PHEMT's and InGaAs lattice matched to InP for HBT's. These OFM data were taken on a multi-wafer production MBE reactor.