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Electromigration Wafer Level Reliability Test and Analysis Methodology

Weis, E.A.,Kinsbron, E., Chanoch, G.,Snyder, M.M.

Tel Aviv（1991）

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Abstract
As an outcome of the advances in integrated circuit fabrication technology, electromigration has become a major reliability concern in silicon VLSI circuits. This paper presents an innovative testing and analysis approach, that has been implemented, and allows a substantial reduction in the electromigration test times of VLSI metal thin film
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Key words
VLSI,electromigration,life testing,materials testing,metallisation,reliability,Al metallisation,Si circuits,VLSI,analysis approach,analysis methodology,electromigration test times,innovative testing,metal thin film,reliability concern,wafer level reliability test
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