Modeling of a Parameter to Evaluate Multilevel Operation of Bipolar Oxide Resistive Device

We propose a simple and efficient model using a phenomenological fitting parameter for current-voltage sweeps to describe vacancy dynamics in oxide resistive devices, and thereby to explain the relation between physical state and resistance in these devices. The fitting parameter serves as a figure of merit, describing a device's capability for multibit operation. The understanding achieved through this model allows efficient evaluation of device performance factors including the maximum ON/OFF ratio and the multiresistance property.