Investigation of anomalous relation for HCI-induced abrupt VT fall-off and gate-oxide destruction with Ig-Vg curves in LD-PMOSFETs
Power Semiconductor Devices & IC's（2014）
Key words
mosfet,hot carriers,isolation technology,semiconductor device reliability,hci,kirk effect,ld pmosfet,sti,current-voltage curve,drain side channel,gate oxide destruction,hot carrier injection,hot carrier stress,hot electron induced punch-through effect,lateral diffused pmos transistor,shallow trench isolation,time-to-failure,stress,temperature measurement,human computer interaction,logic gates
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