Advanced TEM Applications in Semiconductor Devices

A. Y. Du,J. Zhu, Y. K. Zhou,B. H. Liu,Eddie Er,Z. Q. Mo,S. P. Zhao,Jeffrey Lam

International Symposium on the Physical and Failure Analysis of Integrated Circuits（2014）

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关键词

MOSFET,focused ion beam technology,holography,semiconductor device reliability,transmission electron microscopy,EELS spectrum,FIB damage,IC failure analysis,MOSFET P-N junction,S-D P-N junction,TEM holography,advanced TEM applications,advanced TEM technique,channel strain,crystallography orientation,dielectric bonding chemical analysis,energy resolution,holography strain measurement,low-energy milling,magnetic domain imaging,magnetic domains,measurement sensitivity,numerical deconvolution,phase diagram,salicide-contact,sample preparation,sample thickness,semiconductor devices,two-beam diffraction beam intensity

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