Electrical injection in GaP-based laser waveguides and active areas

Jeanphilippe Gauthier,Cedric Robert,S Almosni,Charles Cornet,Yoan Leger,Mathieu Perrin,A Letoublon,C Levallois,C Paranthoen,J P Burin,J Even,T Rohel,K Tavernier,Julie Lepouliquen,H Carrere,A Balocchi,X Marie,Olivier Durand

Indium Phosphide and Related Materials（2014）

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iii-v semiconductors,annealing,gallium compounds,integrated optics,optical fabrication,optical materials,optical pumping,p-i-n diodes,photoluminescence,quantum well lasers,silicon,waveguide lasers,gap,gap substrate,gap-based pin diode,gap-based laser waveguides,si,active areas,barrier composition,carrier injection,characteristic resistance,device engineering,electrical injection,electrical properties,electrically pumped laser fabrication,nitrogen incorporation,p-contact,photonic integration,quantum well materials,thermal annealing,time-resolved photoluminescence,semiconductor lasers,metals,nitrogen

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