Tunneling currents and reliability of atomic-layer-deposited SiBCN for low-κ spacer dielectrics

Richard G Southwick,Rajesh Sathiyanarayanan,Mohit Bajaj, Sharad Mehta,Takayoshi Yamashita,Suresh Gundapaneni,R Pandey,E Wu,Kota V R M Murali,S Cohen,J H Stathis

Waikoloa, HI（2014）

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摘要

Reduced gate-to-contact thickness is prompting a search for compatible spacer dielectrics with reduced dielectric constants (κ). We compare the reliability of the traditional spacer dielectric, Si3N4, with a lower κ material, SiBCN. Weibull slopes and power-law exponent are measured to be close to that of SiO2. Guidance is given on the minimum SiBCN spacer thickness.

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关键词

weibull distribution,atomic layer deposition,boron compounds,carbon compounds,leakage currents,low-k dielectric thin films,permittivity,reliability,silicon compounds,tunnelling,si3n4,sibcn,sio2,weibull slope,atomic-layer-deposited sibcn reliability,dielectric constant,leakage current,low-κ spacer dielectric,power-law exponent,reduced gate-to-contact thickness,spacer dielectric reliability,tunneling current,mos cap,tddb,silicon nitride,materials,tunneling,dielectrics,logic gates

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