Improved Trap-Related Characteristics On Sinx/Algan/Gan Mishemts With Surface Treatment

Yu-Syuan Lin,King-Yuen Wong,G. P. Lansbergen, J. L. Yu,C. J. Yu,C. W. Hsiung, H. C. Chiu, S. D. Liu,P. C. Chen,F. W. Yao,R. Y. Su, C. Y. Chou, C. Y. Tsai,F. J. Yang,C. L. Tsai, C. S. Tsai,X. Chen,H. C. Tuan,Alex Kalnitsky

Power Semiconductor Devices & IC's（2014）

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关键词

III-V semiconductors,MISFET,aluminium compounds,gallium compounds,high electron mobility transistors,semiconductor device reliability,silicon compounds,surface treatment,wide band gap semiconductors,MISHEMT,SiNx-AlGaN-GaN,deep-level trap-related characteristics,positive bias temperature stability,silicon substrate,slow-trap related device reliability,surface donor,surface treatment,trap related device characteristics

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