Performance of Crossed Anisotropy Multilayered CoZrNb Films As IC Chip Level Electromagnetic Noise Suppressor
IEEE transactions on magnetics(2014)
Abstract
Co-Zr-Nb multilayers with crossed anisotropy along with multilayers with uniaxial anisotropy were investigated from the standpoint of electromagnetic noise suppressors. Frequency dependences of conduction losses and magnetic near field intensity of a microstrip line (MSL) covered with these multilayers were measured simultaneously. It was found that ferromagnetic resonance excited by RF field from MSL takes a major role of noise suppression over a wide frequency. The ferromagnetic resonance frequency is determined by intrinsic anisotropy field. In addition, shape anisotropy field caused by presence of MSL is negligibly small. The in-plane isotropy feature of noise suppressing performance for the crossed anisotropy films was verified experimentally and numerically.
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Key words
Conductive loss,Co-Zr-Nb,electromagnetic noise suppressor,ferromagnetic resonance (FMR),integrated circuit (IC) chip,microstrip line (MSL),near field,permeability thin film
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