Joint Impact of Random Variations and RTN on Dynamic Writeability in 28nm Bulk and FDSOI SRAM
ESSDERC（2014）
关键词
Monte Carlo methods,SRAM chips,failure analysis,random noise,FDSOI SRAM,Monte Carlo simulation,RTN,bitcell failure,bitcell susceptibility,bulk SRAM,dynamic writeability,failure mechanisms,in-situ SRAM cells,intermittent errors,random telegraph noise,random variations,scaled process,size 28 nm
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