High-Performance Single-Crystal-Like Strained-Silicon Nanowire Thin-Film Transistors Via Continuous-Wave Laser Crystallization

High-performance polycrystalline-silicon nanowire (NW) thin-film transistors (TFTs) have been demonstrated via continuous-wave laser crystallization (CLC) to exhibit the low subthreshold swing of 216 mV/decade and high ON/OFF ratio of 1.6×109. In addition, the thermal stress of ~800 MPa induced from the CLC process also contributed to the single-crystal-like silicon NW CLC TFTs to achieve an excellent field-effect mobility of up to 900 cm2V-1s-1.