A Unified Two-Band Model for Oxide Traps and Interface States in MOS Capacitors

The distributed oxide trap model based on tunneling of carriers from the semiconductor surface is unified with the two-band Shockley-Read-Hall type of capture and emission model for interface states. The new model explains the often observed upturn of MOS conductance at high frequencies when biased in inversion. The unified two-band model fully covers both types of charge traps in all MOS bias regions.