Floating-body-correlated subthreshold behavior of SOI NMOS device considering back-gate-bias effect

This paper reports the floating-body-correlated subthreshold behavior of the SOI NMOS device considering the back-gate-bias effect. As verified by the experimentally measured data, when the channel length shrinks from 1µm to 120nm, the subthreshold slope becomes steeper due to the dominance of the parasitic BJT in the thin film. For the channel length becomes smaller further to 60nm, the subthreshold slope becomes less steep as a result of the dominating DIBL effect in the MOS channel region. As the device is biased at the back gate bias of 10V, for a long channel, the subthreshold slope is improved due to the enhanced function of the parasitic BJT and for a short channel of 60nm, the subthreshold slope is not improved substantially due to the dominance of DIBL.