Preparation of A Silicon Micro-Strip Nuclear Radiation Detector by A Two-Step Annealing Process
Chinese Physics C, High Energy Physics and Nuclear Physics/Chinese physics C(2011)
摘要
The annealing process for boron implantation is a crucial step during large size nuclear radiation detector fabrication. It can reduce the lattice defects and the projection straggling. A two-step annealing process for boron implantation was developed instead of a one-step annealing process, and the reverse body resistance of a silicon micro-strip detector was significantly increased, which means that the performance of the detector was improved.
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关键词
nuclear radiation detector,two-step annealing,reverse body resistance
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