Effect of Oxidation Enhanced Diffusion on Hot Carrier Injection Induced Degradation in N-Type High-Voltage Dddmosfet

This paper investigates how the oxidation enhanced diffusion effect influences the reliability of hot carrier injection (HCI) in N-type high-voltage double-diffused drain MOSFET (DDDMOSFET). The oxidation enhanced diffusion influences impurity diffusion in silicon evidently, thus changes the device characteristic and reliability. By NDD drive-in at high temperature with N-2 + O-2 mixed atmosphere, we make use of the oxidation enhanced diffusion effect in NDD region of N-type HV DDDMOSFET to improve the HCI reliability. And the results are accordant with reliability simulation of TCAD softwar.