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Research On Third-Order Susceptibility Tensor Of Silicon At Telecom Wavelength

5TH INTERNATIONAL SYMPOSIUM ON ADVANCED OPTICAL MANUFACTURING AND TESTING TECHNOLOGIES: OPTICAL TEST AND MEASUREMENT TECHNOLOGY AND EQUIPMENT(2010)

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摘要
In this paper, the electro-induced birefringence based on Kerr effect and Franz-Keldysh effect in bulk silicon crystal at 1.3 mu m wavelengths has been measured. By using Kerr effect, the third-order susceptibility tensor of bulk crystalline silicon has been calculated. The two independent tensor of silicon chi((3)) susceptibility can be obtained by calculation chi((3))(xyxy) = 6.22.(1+/-2.2%)x10(-20) m(2)/V-2 and chi((3))(xxxx) = 9.13.(1+/-2.2%)x10(-20) m(2)/V-2. The research can drive the silicon utility in the photo-electricity field.
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关键词
Kerr effect, third-order susceptibility tensor, Franz-Keldysh effect, photo-electricity field
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