Reliability Improvement in Multi-Level Cu/Sioc Low K Integration

Y. W. Chen,Johnston Zou,G. Zhang,Steven Chen,Jianping Wang,T. Hu,E. Bei,Jimmy Wang,Allen Fan,I. -C. Chen

IPFA 2006 PROCEEDINGS OF THE 13TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS（2006）

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摘要

In this paper, inter layer dielectric characteristic ramped voltage breakdown (VBD) performance of multiplayer Cu/SiOC interconnect was studied. The results showed that the breakdown reliability is highly process-related. Some dominating factors, such as via etching process, integration scheme used and Cu/dielectric interface etc., were discussed and proposed to improve breakdown reliability performance

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关键词

copper,cryogenic electronics,dielectric properties,semiconductor device breakdown,semiconductor device reliability,silicon compounds,Cu-SiOC,breakdown reliability,dielectric characteristic,low k integration,multiplayer interconnect,voltage breakdown

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