Ftir Study of C-Implanted Sio2 after High-Energy Pb-Ion Irradiation

SiO2 films were firstly implanted at room temperature (RT) with 120keV C-ions to a dose of 2.0 x 10(17), 5.0 x 10(17) or 8.6 x 10(17) ions/cm(2), and then the C-doped SiO2 films were irradiated at RT with 950 MeV Pb ions to a fluence of 5.0 x 10(11), 1.0 X 10(12) or 3.8 x 10(12) ions/cm(2), respectively. The Fourier Transformation Infrared (FTIR) spectra of these samples were measured using a Spectrum GX IR spectroscopy. From the obtained micro-FTlR spectra, we found that significant chemical bonds such as Si-C and Si (C)-O-C bonds were formed in the C doped SiO2 films after high-energy Ph ion irradiation. It was also found that CO2 Molecule was formed in the high dose C-doped SiO2 films after large fluence Ph ion irradiations. The existence of a large number of Si-C bonding and CO2 molecule implies that nano-sized Si cluster and/or SiC grains may form in the C doped SiO2 films after high-energy Ph ion irradiation.