Growth of orientation-controlled Pb(Mg,Nb)O 3 -PbTiO 3 thin films on Si(100) by using oriented MgO films as buffers

Thin films of relaxor ferroelectric Pb(Mg,Nb)O 3 -PbTiO 3 with different orientations were grown by pulsed-laser deposition on Si(100). By using (111)-, (110)- and (100)-oriented MgO thin film as buffer and the LaNiO 3 thin film as a bottom electrode, (110)- and (100)- oriented or preferred and polycrystalline PMN-PT thin films were obtained. The (110)-oriented PMN-PT thin film showed dielectric permittivity of about 1350 and loss factor cosδ of <0.07.