GaN m-i-n LED grown by MOVPE
MRS Internet Journal of Nitride Semiconductor Research(1996)
摘要
Undoped and Zinc-doped GaN films have been grown using TMGa, DEZn and Ammonia by MOVPE. The GaN blue-green LEDs of m-i-n structure have been fabricated. They can be operated at forward bias less than 5 volts. The EL peak wavelength was from 455 nm to 504 nm.
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