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Photoluminescence in nanosized silicon synthesized by laser chemical vapor deposition

Qinghua Daxue Xuebao/Journal of Tsinghua University(1996)

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摘要
The photoluminescence of nanosized silicon synthesized by laser chemical vapor deposition has been studied. With the excitation light of 300-450nm, a wide photoluminescence was observed between the wavelength of 400-650nm. The nanosized silicon with the diameter larger than 10nm presents photoluminescence at room temperature was found. The quantum confinement/luminescence centers model can be used to interpret the experimental phenomena qualitatively.
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