Cosi2/Sige Contact Formation By Co/A-Sige/Si Solid State Reaction

W J Qi,B Z Li,G B Jiang,W N Huang,Z G Gu

IEEE Region 10 Annual International Conference, Proceedings/TENCON（1995）

引用 1|浏览4

暂无评分

摘要

The Co/a-SiGe/Si solid state reaction has been studied in this paper. The experimental results demonstrated the simultaneously SiGe/Si solid phase hetero-epitaxy and CoSi2/SiGe contact formation. The SiGe crystallization is a result of the Ge rejection and interdiffusion with Si during the Co/a-SiGe/Si ternary interaction.

查看译文

关键词

temperature,crystallisation,sputtering,annealing

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要