Photoemission performance of transmission-mode GaALAs/InGaAs photocathode

In order to match the laser working at 1.06 mu m, a GaAlAs/InGaAs photocathode material was grown by molecular beam epitaxial and was fabricated in the form of transmission-mode GaAlAs/InGaAs photocathode module. It is shown that the integral sensitivity is 575 mu A.Im(-1) and the radiant sensitivity at 1.06 pm is 0.043 mA.W-1 for the GaAlAs/InGaAs photocathode module. Comparing with the optical properties of the GaAs photocathode module and the photoemission performance curves of the other InGaAs photocathode respectively, it is indicated that the GaAlAs/InGaAs photocathode module prepared in this paper can respond shifting to the infrared waveband, the radiant sensitivity at 1.06 pm is higher than that of Russia's photocathode, and the integral sensitivity is higher than that of US Andor's photocathode. The results show that the parameters of the GaAlAs window layer and the InGaAs active layer should be improved to design in order to decrease the shortwave response and further increase the longwave response.