Effect Of Electron Injection At The Pt-Interface On A Bipolar Resistance Switching Device With Ta/Pr0.7ca0.3mno3/Pt Structure
APPLIED PHYSICS EXPRESS(2009)
摘要
The transient response waveform during pulse-forming was investigated on a bipolar resistance switching (RS) device in which Pr0.7Ca0.3MnO3 (PCMO) was sandwiched by a Ta top electrode (TE) and a Pt bottom electrode. We identified "waiting time", which is specific unresponsive time proportional to the square of the TE's area. By combining transmission electron microscopy and electron energy loss spectroscopy, we also found that electrons were injected at the PCMO/Pt interface during forming. We propose that bipolar RS is caused by injecting electrons into and extracting electrons from the PCMO/Pt interface, and is linked with oxidation/reduction reactions at the Ta/PCMO interface. (C) 2009 The Japan Society of Applied Physics
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关键词
Resistive Switching,Metal-Insulator Transition,Bismuth-Coated Electrodes
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