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Diffusive Electronic Transport in Superconductor-Semiconductor-superconductor Junctions of Al or Nb on Δ-Doped GaAs

J. Kutchinsky,R. J. Taboryski,T. Clausen,C. B. Sørensen,P. E. Lindelof,J. Bindslev Hansen,C. Schelde Jacobsen,J. L. Skov

Czechoslovak Journal of Physics/Czechoslovak journal of physics（1996）

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Abstract
We report measurements on planar superconductor-semiconductor-superconductor (S−Sm−S) junctions consisting of a n++ modulation doped conduction layer in MBE grown GaAs with superconducting contacts of Al or Nb. At distances between the two superconducting banks below ≈3.5μm we observe a coupling between the two superconductors, due to multiple Andreev reflections at the S−Sm interfaces.
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Key words
GaAs,Elastic Scattering,Normal Region,Schottky Barrier Height,Differential Resistance
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