Electrically Pumped 10 Gbit∕s MOVPE-grown Monolithic 1.3 Μm VCSEL with GaInNAs Active Region

A Ramakrishnan,G Steinle,D Supper,C Degen,G Ebbinghaus

Electronics letters（2002）

引用 96|浏览5

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摘要

The authors report an electrically pumped MOVPE-grown VCSEL on GaAs substrate with a GaInNAs active region emitting single mode at 1293 nm with record characteristics. Continuous wave output power at room temperature with 1.4 mW, a threshold current of 1.25 mA and a data transmission rate of 10 Gbit/s has been realised.

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关键词

gallium arsenide,indium compounds,gallium compounds,III-V semiconductors,quantum well lasers,surface emitting lasers,laser transitions,laser modes,optical transmitters,vapour phase epitaxial growth,MOCVD

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