Optical Contrast Formation in Amorphous Silicon Carbide with High-Energy Focused Ion Beams

Thin films (d∼1μm) of hydrogenated amorphous silicon carbide (a-Si1−xCx:H), deposited by RF reactive magnetron sputtering with different carbon content x, have been implanted with high fluences (Φ=1016–1017cm−2) of high-energy (E=0.2–1MeV) He+ ions as the implant species. The induced structural modification of the implanted material results in a considerable change of its optical properties, best manifested by a significant shift of the optical absorption edge to lower photon energies as obtained from photo-thermal-deflection spectroscopy (PDS) data. This shift is accompanied by a remarkable increase of the absorption coefficient over one order of magnitude (photo-darkening effect) in the measured photon energy range (0.6–3.8eV), depending on the ion fluence, energy and carbon content of the films. These effects could be attributed both to additional defect introduction and increased graphitization, as confirmed by Raman spectroscopy and infra-red (IR) optical transmission measurements. The optical contrast thus obtained (between implanted and unimplanted film material) could be made use of in the area of high-density optical data storage using focused high-energy He+ ion beams.