New Trends in Wide Bandgap Semiconductors: Synthesis of Single Crystalline Silicon Carbide Layers by Low Pressure Chemical Vapor Deposition Technique on P-Type Silicon (100 and/or 111) and their Characterization

We report the growth of SiC layers on low cost p-type silicon (100 and/or 111) substrates maintained at constant temperature (1050 - 1350 degrees C, Delta T=50 degrees C) in a low pressure chemical vapor deposition reactor. Typical Fourier transform infrared spectrum showed a dominant peak at 800 cm(-1) due to Si-C bond excitation. Large area x-ray diffraction spectra revealed single crystalline cubic structures of 3C-SiC(111) and 3C-SiC(200) on Si(111) and Si(100) substrates, respectively. Cross-sectional views exposed by scanning electron microscopy display upto 104 mu m thick SiC layer. Energy dispersive spectroscopy of the layers demonstrated stiochiometric growth of SiC. Surface roughness and morphology of the films were also checked with the help of atomic force microscopy. Resistivity of the as-grown layers increases with increasing substrate temperature due to decrease of isolated intrinsic defects such as silicon and/or carbon vacanies having activation energy 0.59 +/- 0.02 eV.