Transient Turn-on Characteristics of Si RBDT and SiC MOSFET under Nanosecond Current Pulse Range
SOLID-STATE ELECTRONICS（2024）
关键词
Reverse blocking diode thyristor (RBDT),Silicon carbide metal oxide semiconductor field effect transistor (SiC MOSFET),Turn-on speed,Transient characteristics
AI 理解论文
溯源树
样例
生成溯源树，研究论文发展脉络
Chat Paper
正在生成论文摘要