Crystal SiGeC far infrared sensor with temperature isolation improvement structure
Electronics Letters（2003）
摘要
A novel crystal SiGeC far infrared (FIR) sensor based on the change of resistance in a thermistor has been fabricated and developed. The developed sensor was prepared using MEMS technology to achieve a better thermal isolation structure. The thermistor in the FIR detector is made of Si0.68Ge0.31C0.01 thin films for its large activation energy and the temperature coefficient. Finite element method package ANSYS was employed to analyse the thermal isolation in the FIR detector. Responsivity, thermal conductance and thermal time constant were investigated and it was found that the thermal isolation improved structure possesses a much superior performance.
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关键词
thermal isolation structure,thermal analysis,far infrared sensor,thermistors,semiconductor materials,thin film devices,thermistor resistance change,sigec thin films,responsivity,temperature distribution,thermal time constant,infrared detectors,temperature coefficient,thermal conductance,finite element analysis,silicon compounds,si0.68ge0.31c0.01,germanium compounds,finite element method package,activation energy,ansys,micromachining,thermal stability,thermal conductivity,semiconductor thin films,mems fabrication technology,crystal sigec fir sensor,far infrared
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