Studies on SiC Liquid Phase Crystallization As Technique for SiC Bulk Growth

LPE experiments have been conducted at 1650 less than or equal to T less than or equal to 2000 degrees C to study basic aspects of SiC crystal growth from Si solution. Growth rates up to 140 mu m/h have been achieved. Depending on substrate orientation two different types of growth morphology were found: faceted and step flow growth. The layers were characterized by PL-and XRD-measurements showing good quality. The closing of micropipes during liquid phase growth could be demonstrated. With a mass transfer model considering crystal size and solution flow crystallization rates were calculated, which should allow stable conditions during bulk growth. Growth velocities in the range of 5-10 mm/day were found for T greater than or equal to 2000 degrees C and intense solution flow. Finally a new high pressure growth facility is presented, which is designed for solution growth of SIC up to T = 2300 degrees C.