Radiation Hardness Evaluation of Ε-Ga2o3 Thin-Film Devices under Swift Heavy Ion Irradiation
APPLIED SURFACE SCIENCE(2024)
摘要
•The radiation hardness of ε-Ga2O3 exposed to 1907 MeV Ta SHI irradiation was studied.•Structural analysis and DFT calculations reveal the presence of high-density extrinsic flux-induced defects.•A widening of the band gap in ε-Ga2O3 after Ta SHI irradiation is observed.•ε-Ga2O3 demonstrate outstanding radiation hardness to Ta SHI irradiation in terms of photoresponse performance.
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关键词
Swift heavy ion irradiation,ε-Ga2O3,Optoelectrical characteristics,Defect dynamics,Band structure,Radiation hardness
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