Stoichiometric Study of the Dielectric and Magnetic Properties in Charge Frustrated System LuFe2O4

We report dielectric and magnetic properties of a single crystal of LuFe2O4 with different degrees of oxygen deficiency. The oxygen stoichiometry was monitored with the gas mixture ratio of CO2 and CO during the crystal growing process. A sample having high resistivity of about 10 k cm sample was found at room temperature. The relation between the control of the charge frustration and the completeness of the charge ordering is discussed.