Ge-Dots/Si Multilayered Structures Fabricated by Ni-Induced Lateral Crystallization

We report on the fabrication of high-quality Ge-dots/Si multilayered structure films by metal-induced lateral crystallization (MILC). Ge dots are self-assembled grown on amorphous Si layer using low-pressure chemical vapor deposition, and then low-temperature crystallization is carried out by Ni-based MILC processing. The micro Raman spectroscopy, optical microscopy and electron microscopy observations reveal that the crystallized Si film has large leaf-like grains elongated along the MILC direction with (110) preference. Moreover, the strain shift of Ge dots reflects the formation of high quality interface between the crystallized Si and Ge dot. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.